Infrared spectroscopy of hole-doped ABA-stacked trilayer graphene
نویسندگان
چکیده
منابع مشابه
Raman characterization of ABA- and ABC-stacked trilayer graphene.
Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the dou...
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We study the Landau level spectrum of ABAand ABC-stacked trilayer graphene. We derive analytic lowenergy expressions for the spectrum, the validity of which is confirmed by comparison to a π -band tight-binding calculation of the density of states on the honeycomb lattice. We further study the effect of a perpendicular electric field on the spectrum, where a zero-energy plateau appears for ABC ...
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The band structure and the optical conductivity of an ABA (Bernal-type) stacked graphene trilayer are calculated. It is shown that, under appropriate doping, a strong resonant peak develops in the optical conductivity, located at the frequency corresponding to approximately 1.4 times the interlayer hopping energy and caused by the 'nesting' of two nearly parabolic bands in the electronic spectr...
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Chunxiao Cong,1 Jeil Jung,2,3,4 Bingchen Cao,1 Caiyu Qiu,1 Xiaonan Shen,1 Aires Ferreira,3,4,5 Shaffique Adam,3,4 and Ting Yu1,3,4,* 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore 2Department of Physics, University of Seoul, Seoul 130-743, Korea 3Department of Physics, Faculty of Science, National Univer...
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ژورنال
عنوان ژورنال: EPL (Europhysics Letters)
سال: 2012
ISSN: 0295-5075,1286-4854
DOI: 10.1209/0295-5075/100/58003